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公开(公告)号：US11925065B2
公开(公告)日：2024-03-05
申请号：US17680513
申请日：2022-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ajeong Choi , Yong Uk Lee , Chul Baik
IPC: H10K59/12 , H01L27/15 , H10K59/121 , H10K59/122
CPC classification number: H10K59/1213 , H01L27/156 , H10K59/122
Abstract: A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.
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公开(公告)号：US10854831B2
公开(公告)日：2020-12-01
申请号：US15804279
申请日：2017-11-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ajeong Choi , Youngjun Yun , Yong Uk Lee , Suk Gyu Hahm
Abstract: A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.
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公开(公告)号：US10651255B2
公开(公告)日：2020-05-12
申请号：US15826011
申请日：2017-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ajeong Choi , Suk Gyu Hahm , Jeong Il Park , Yong Uk Lee , Jong Won Chung
IPC: H01L27/32 , H01L51/00 , G09G3/3233 , G09G3/3283 , G09G3/36 , H01L51/05
Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.
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公开(公告)号：US20190035868A1
公开(公告)日：2019-01-31
申请号：US15826011
申请日：2017-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ajeong Choi , Suk Gyu Hahm , Jeong II Park , Yong Uk Lee , Jong Won Chung
IPC: H01L27/32 , G09G3/3233 , G09G3/3283 , H01L51/05 , G09G3/36
Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.
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公开(公告)号：US20180233569A1
公开(公告)日：2018-08-16
申请号：US15864275
申请日：2018-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Suk Gyu Hahm , Jeong Il Park , Youngjun Yun , Joo Young Kim , Yong Uk Lee
IPC: H01L29/423 , H01L29/417 , H01L21/28 , H01L51/05
CPC classification number: H01L29/42384 , H01L21/28158 , H01L27/3274 , H01L29/41733 , H01L51/0533 , H01L51/0541 , H01L51/055
Abstract: A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.
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Patent Agency Ranking
公开(公告)号：US11283157B2
公开(公告)日：2022-03-22
申请号：US16793297
申请日：2020-02-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chul Baik , Yong Uk Lee , Eung Yeoul Yoon , Dong Hyun Sohn , Nak Hyun Kim , Byung Ha Park , Joon-Young Choi , Won Bin Hong
Abstract: A display module configured to improve transmission and reception performance of an electronic device includes: a first panel; a second panel disposed to be opposite to the first panel; and an antenna layer disposed between the first panel and the second panel, and comprising a resin layer formed by an imprinting method, wherein the resin layer includes: an engraved pattern formed in one surface; and an ink layer formed with a conductive material filled in the engraved pattern.
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公开(公告)号：US10573955B2
公开(公告)日：2020-02-25
申请号：US14977900
申请日：2015-12-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chul Baik , Yong Uk Lee , Eung Yeoul Yoon , Dong Hyun Sohn , Nak Hyun Kim , Byung Ha Park , Joon-Young Choi , Won Bin Hong
IPC: H01Q1/24
Abstract: A display module configured to improve transmission and reception performance of an electronic device includes: a first panel; a second panel disposed to be opposite to the first panel; and an antenna layer disposed between the first panel and the second panel, and comprising a resin layer formed by an imprinting method, wherein the resin layer includes: an engraved pattern formed in one surface; and an ink layer formed with a conductive material filled in the engraved pattern.
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公开(公告)号：US10269913B2
公开(公告)日：2019-04-23
申请号：US15864275
申请日：2018-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Suk Gyu Hahm , Jeong Il Park , Youngjun Yun , Joo Young Kim , Yong Uk Lee
IPC: H01L51/05 , H01L29/423 , H01L29/417 , H01L21/28 , H01L27/32
Abstract: A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.
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公开(公告)号：US11296170B2
公开(公告)日：2022-04-05
申请号：US16886089
申请日：2020-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ajeong Choi , Yong Uk Lee , Chui Baik
Abstract: A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.
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公开(公告)号：US20180269413A1
公开(公告)日：2018-09-20
申请号：US15804279
申请日：2017-11-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ajeong CHOI , Youngjun Yun , Yong Uk Lee , Suk Gyu Hahm
CPC classification number: H01L51/0558 , H01L51/0008 , H01L51/0074 , H01L51/0562 , H01L51/10 , H01L51/105
Abstract: A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.
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