发明申请
- 专利标题: CARRIER STRUCTURE
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申请号: US15818773申请日: 2017-11-21
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公开(公告)号: US20190088401A1公开(公告)日: 2019-03-21
- 发明人: Chang-Fu Chen , Chun-Hao Chen , Kuan-Hsi Wu , Pi-Te Pan
- 申请人: Unimicron Technology Corp.
- 申请人地址: TW Taoyuan City
- 专利权人: Unimicron Technology Corp.
- 当前专利权人: Unimicron Technology Corp.
- 当前专利权人地址: TW Taoyuan City
- 优先权: TW106131670 20170915
- 主分类号: H01F27/28
- IPC分类号: H01F27/28 ; H01F27/24 ; H05K1/16 ; H05K1/11
摘要:
A carrier structure includes a substrate, a first patterned circuit layer and at least one magnetic element. The substrate has a first surface and an opening passing through the substrate. The first patterned circuit layer is disposed on the first surface of the substrate and includes an annular circuit for generating an electromagnetic field. The magnetic element is disposed within the opening of the substrate, wherein the magnetic element couples the annular circuit and acts in response to the magnetic force of the electromagnetic field.
公开/授权文献
- US10825599B2 Carrier structure 公开/授权日:2020-11-03
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