A silicon carbide crystal and a manufacturing method for same are provided. A silicon carbide crystal seed used for the silicon carbide crystal has a crystal-growing surface with a surface roughness (Ra) less than 2.0 nm, and a thickness of the silicon carbide crystal seed is less than 700 μm. Therefore, the silicon carbide crystal grown from the silicon carbide crystal seed by sublimation method (which is also a PVT method) may have low basal plane dislocation (BPD) and low micropipe density (MPD).