公开(公告)号：US20240190710A1

公开(公告)日：2024-06-13

申请号：US18214324

申请日：2023-06-26

申请人： Pallidus, Inc.

发明人： Mark S. Land

IPC分类号： C01B32/956 ,  C01B32/977 ,  C04B35/515 ,  C04B35/56 ,  C04B35/571 ,  C04B35/80 ,  C08G77/00 ,  C08G77/12 ,  C08G77/20 ,  C08G77/50 ,  C08L83/04 ,  C23C14/06 ,  C30B25/02 ,  C30B29/36

CPC分类号： C01B32/956 ,  C01B32/977 ,  C04B35/515 ,  C04B35/56 ,  C04B35/5603 ,  C04B35/571 ,  C04B35/80 ,  C08G77/20 ,  C08G77/50 ,  C08L83/04 ,  C23C14/0635 ,  C30B25/02 ,  C30B29/36 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3895 ,  C04B2235/44 ,  C04B2235/48 ,  C04B2235/483 ,  C04B2235/528 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/94 ,  C04B2235/96 ,  C08G77/12 ,  C08G77/80

摘要： Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SIC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.

公开(公告)号：US12005416B2

公开(公告)日：2024-06-11

申请号：US17260132

申请日：2019-07-08

申请人： USTAV ORGANICKE CHEMIE A BIOCHEMIE AV CR, V. V. I. ,  USTAV MAKROMOLEKULARNI CHEMIE AV CR, V. V. I.

发明人： Petr Cigler ,  Jan Havlik ,  Martin Hruby ,  Jan Kucka

IPC分类号： B01J19/08 ,  C01B32/28 ,  C01B32/956

CPC分类号： B01J19/084 ,  C01B32/28 ,  C01B32/956 ,  B01J2219/0879 ,  B01J2219/12 ,  C01P2002/76 ,  C01P2004/61 ,  C01P2004/62

摘要： The present invention relates to a process for ion irradiation of a particulate substrate containing the steps of embedding particulate substrate in a solid matrix having 10B atoms, and exposing the matrix obtained in the previous step to a neutron flux to give irradiated particulate substrate. The process is extremely effective and amenable to large scale and is particularly suitable for producing irradiated nanodiamonds and irradiated SiC particles.

公开(公告)号：US20240178377A1

公开(公告)日：2024-05-30

申请号：US18519554

申请日：2023-11-27

申请人： HANSOL CHEMICAL CO., LTD.

发明人： Jeonghun Lee ,  Hyeonwoo Shim ,  Wooyeong Choi ,  Jongha Lee ,  Seman Kwon

IPC分类号： H01M4/36 ,  C01B32/956 ,  H01M4/134 ,  H01M4/38 ,  H01M10/0525

CPC分类号： H01M4/366 ,  C01B32/956 ,  H01M4/134 ,  H01M4/386 ,  H01M10/0525 ,  H01M2004/021

摘要： Provided are an anode active material including a core including metal particles, and a shell layer formed on an outer portion of the core, in which the shell layer includes metal carbide particles and a carbon-based material, and a number density (number/μm2) of the metal carbide particles in the shell layer is 50 or more to 100 or less, a method of preparing the same, and a lithium secondary battery including the same.

公开(公告)号：US20240034635A1

公开(公告)日：2024-02-01

申请号：US18266176

申请日：2021-12-13

申请人： Zadient Technologies SAS

发明人： Ivo Crössmann ,  Friedrich Schaaff ,  Hilmar Richard Tiefel ,  Kagan Ceran

IPC分类号： C01B32/956 ,  C30B25/14 ,  C23C16/44 ,  C30B29/36

CPC分类号： C01B32/956 ,  C30B25/14 ,  C23C16/4411 ,  C30B29/36

摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

公开(公告)号：US20230391627A1

公开(公告)日：2023-12-07

申请号：US18175934

申请日：2023-02-28

申请人： Resonac Corporation

发明人： Masato ITO ,  Hiromasa SUO

IPC分类号： C01B32/956

CPC分类号： C01B32/956 ,  C01P2006/80 ,  C01P2006/60

摘要： In a SiC substrate according to the present embodiment, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm−1 or less.

公开(公告)号：US11802321B2

公开(公告)日：2023-10-31

申请号：US15889402

申请日：2018-02-06

申请人： Sinter Print, Inc.

发明人： Jacob S. Nuechterlein ,  Jeremy Joseph Iten

IPC分类号： C22C1/02 ,  B33Y70/00 ,  C22C21/08 ,  C22C21/04 ,  B33Y10/00 ,  C22C21/00 ,  C22C27/04 ,  C22C19/00 ,  C22C19/03 ,  C22C21/02 ,  C01B32/914 ,  C01B32/956 ,  C01B32/921 ,  C22C32/00 ,  C22C1/04 ,  C22C1/10 ,  B22F10/28 ,  B22F10/34 ,  C22C1/047 ,  B33Y50/00 ,  B33Y80/00 ,  B22F12/10 ,  B22F10/32 ,  B22F10/322 ,  B22F10/66

CPC分类号： C22C1/02 ,  B22F10/28 ,  B22F10/34 ,  B33Y10/00 ,  B33Y70/00 ,  C01B32/914 ,  C01B32/921 ,  C01B32/956 ,  C22C1/026 ,  C22C1/047 ,  C22C1/0416 ,  C22C1/0433 ,  C22C1/10 ,  C22C19/007 ,  C22C19/03 ,  C22C21/003 ,  C22C21/02 ,  C22C21/04 ,  C22C21/08 ,  C22C27/04 ,  C22C32/0047 ,  B22F10/32 ,  B22F10/322 ,  B22F10/66 ,  B22F12/10 ,  B22F2998/10 ,  B33Y50/00 ,  B33Y80/00 ,  B22F2998/10 ,  B22F10/28 ,  B22F10/66 ,  B22F2003/247

摘要： An additive manufacturing method of producing a metal alloy article may involve: Providing a supply of a metal alloy in powder form; providing a supply of a nucleant material, the nucleant material lowering the nucleation energy required to crystallize the metal alloy; blending the supply of metal alloy powder and nucleant material to form a blended mixture; forming the blended mixture into a first layer; subjecting at least a portion of the first layer to energy sufficient to raise the temperature of the first layer to at least the liquidus temperature of the metal alloy; allowing at least a portion of the first layer to cool to a temperature sufficient to allow the metal alloy to recrystallize; forming a second layer of the blended mixture on the first layer; and repeating the subjecting and allowing steps on the second layer to form an additional portion of the metal alloy article.

公开(公告)号：US20230268177A1

公开(公告)日：2023-08-24

申请号：US18309111

申请日：2023-04-28

申请人： SHOWA DENKO K.K.

发明人： Koji KAMEI

IPC分类号： H01L21/02 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  H01L29/04 ,  H01L29/16 ,  H01L29/34 ,  C01B32/956

CPC分类号： H01L21/02529 ,  C23C16/325 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/34 ,  C01B32/956 ,  C01B32/90

摘要： According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

公开(公告)号：US11713252B2

公开(公告)日：2023-08-01

申请号：US17396389

申请日：2021-08-06

申请人： Entegris, Inc.

发明人： Troy Scoggins ,  Rex Gerald Sheppard ,  Abuagela H. Rashed ,  Jonathan Loyd Burr

IPC分类号： C01B32/956 ,  H01L21/02 ,  H01L21/324 ,  C04B41/87 ,  C04B35/52 ,  C04B41/00 ,  C04B41/50 ,  C01B32/97 ,  C01B32/21 ,  H01L29/16 ,  C04B111/00

CPC分类号： C01B32/956 ,  C01B32/21 ,  C01B32/97 ,  C04B35/522 ,  C04B41/009 ,  C04B41/5059 ,  C04B41/87 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/324 ,  H01L29/1606 ,  H01L29/1608 ,  C04B2111/00405 ,  C04B2235/3826 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/722 ,  C04B2235/726 ,  C04B2235/727 ,  C04B2235/728 ,  C04B2235/75 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/9607 ,  C04B41/009 ,  C04B35/522 ,  C04B38/00 ,  C04B41/5059 ,  C04B41/4529 ,  C04B41/4556

摘要： A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.

公开(公告)号：US11684896B2

公开(公告)日：2023-06-27

申请号：US16782662

申请日：2020-02-05

申请人： KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS

发明人： Isam H. Aljundi ,  Chanbasha Basheer ,  Rashed Saed Bakdash

IPC分类号： B01D71/02 ,  B01D71/68 ,  B01D71/62 ,  C02F103/36 ,  C01B32/956 ,  B01D67/00 ,  C02F1/44 ,  C02F101/32

CPC分类号： B01D71/02 ,  B01D67/0013 ,  B01D71/62 ,  B01D71/68 ,  C02F1/447 ,  B01D2323/21 ,  B01D2323/26 ,  B01D2325/02 ,  B01D2325/36 ,  C01B32/956 ,  C02F2101/325 ,  C02F2103/365

摘要： A membrane sorbent is described, which comprises 1-6 wt % silicon carbide nanoparticles dispersed in a polymer matrix. The polymer matrix may comprise polysulfone and polyvinylpyrrolidone. The membrane sorbent is used for separating oil from a contaminated water mixture. The silicon carbide nanoparticles of the membrane sorbent may be made from rice husk ash.

公开(公告)号：US20230127550A1

公开(公告)日：2023-04-27

申请号：US18087037

申请日：2022-12-22

申请人： Elementum 3D, Inc.

发明人： Jacob S. Nuechterlein ,  Jeremy Joseph Iten

IPC分类号： C22C1/02 ,  B33Y70/00 ,  C22C21/08 ,  C22C21/04 ,  B33Y10/00 ,  C22C21/00 ,  C22C27/04 ,  C22C19/00 ,  C22C19/03 ,  C22C21/02 ,  C01B32/914 ,  C01B32/956 ,  C01B32/921 ,  C22C32/00 ,  C22C1/04 ,  C22C1/10 ,  B22F10/28 ,  B22F10/34 ,  C22C1/047

摘要： An additive manufacturing method of producing a metal alloy article may involve: Providing a supply of a metal alloy in powder form; providing a supply of a nucleant material, the nucleant material lowering the nucleation energy required to crystallize the metal alloy; blending the supply of metal alloy powder and nucleant material to form a blended mixture; forming the blended mixture into a first layer; subjecting at least a portion of the first layer to energy sufficient to raise the temperature of the first layer to at least the liquidus temperature of the metal alloy; allowing at least a portion of the first layer to cool to a temperature sufficient to allow the metal alloy to recrystallize; forming a second layer of the blended mixture on the first layer; and repeating the subjecting and allowing steps on the second layer to form an additional portion of the metal alloy article.