- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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申请号： US15936436申请日： 2018-03-27
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公开(公告)号： US20190115215A1公开(公告)日： 2019-04-18
- 发明人: Shinya TAKASHIMA , Katsunori UENO , Masaharu EDO
- 申请人： FUJI ELECTRIC CO., LTD.
- 优先权： JP2017-074037 20170403
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L29/207 ; H01L29/20 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L21/266 ; H01L21/265
摘要：
A vertical semiconductor apparatus includes: a gallium nitride substrate; a gallium nitride semiconductor layer on the gallium nitride substrate; a p-type impurity region in the gallium nitride semiconductor layer and having an element to function as an acceptor for gallium nitride; an n-type impurity region in the p-type impurity region and having an element to function as a donor for gallium nitride; and an electrode provided contacting a rear surface of the gallium nitride substrate. The element to function as the donor in the n-type impurity region includes: a first impurity element to enter sites of gallium atoms in the gallium nitride semiconductor layer; and a second impurity element different from the first impurity element and to enter sites of nitrogen atoms in the gallium nitride semiconductor layer. In the n-type impurity region, a concentration of the first impurity element is higher than that of the second impurity element.
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