Invention Application
- Patent Title: WIDE BANDGAP GROUP IV SUBFIN TO REDUCE LEAKAGE
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Application No.: US16094817Application Date: 2016-06-29
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Publication No.: US20190122972A1Publication Date: 2019-04-25
- Inventor: Benjamin CHU-KUNG , Van H. LE , Willy RACHMADY , Matthew V. METZ , Jack T. KAVALIEROS , Ashish AGRAWAL , Seung Hoon SUNG
- Applicant: Intel Corporation
- International Application: PCT/US2016/040129 WO 20160629
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L29/10 ; H01L29/66 ; H01L29/78
Abstract:
A subfin layer is deposited on a substrate. A fin layer is deposited on the subfin layer. The subfin layer has a conduction band energy offset relative to the fin layer to prevent a leakage in the subfin layer. In one embodiment, the subfin layer comprises a group IV semiconductor material layer that has a bandgap greater than a bandgap of the fin layer.
Public/Granted literature
- US11152290B2 Wide bandgap group IV subfin to reduce leakage Public/Granted day:2021-10-19
Information query
IPC分类:
