Invention Application
- Patent Title: OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP
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Application No.: US16092507Application Date: 2017-04-10
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Publication No.: US20190131497A1Publication Date: 2019-05-02
- Inventor: Lutz Höppel
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Priority: DE102016106928.0 20160414
- International Application: PCT/EP2017/058549 WO 20170410
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/22 ; H01L33/24 ; H01L33/32 ; H01L33/44 ; H01L33/60 ; H01L33/62

Abstract:
An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region, a second semiconductor region and an active zone disposed between the first and second semiconductor regions, an electrically conductive contact layer arranged on a side of the first semiconductor region facing away from the second semiconductor region, and an electrically conductive mirror layer arranged between the first semiconductor region and the electrically conductive contact layer, and laterally protruding at the edge by the first semiconductor region and the electrically conductive contact layer so that between the first semiconductor region and the electrically conductive contact layer there is an interspace in which a protective layer is arranged for protecting the mirror layer, wherein the electrically conductive contact layer extends laterally to an edge of the first semiconductor region, and the electrically conductive contact layer consists of Ni.
Public/Granted literature
- US10784408B2 Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip Public/Granted day:2020-09-22
Information query
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