A non-volatile “reverse memory cell” suitable for use as a building block for a 3-dimensional memory array includes a charge-trapping layer which is programmed or charged through gate-injection, rather than channel-injection. Such a reverse cell may be implemented as either an n-channel memory cell or a p-channel memory cell, without incurring design or process penalties, or any complexity in programming or erase operations. Furthermore, all reading, programming, erase, program-inhibiting operations may be carried out in the reverse memory cell using only positive or only negative voltages, thereby simplifying both the design and the power management operations.