公开(公告)号：US10896916B2

公开(公告)日：2021-01-19

申请号：US16194225

申请日：2018-11-16

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Eli Harari ,  George Samachisa ,  Yupin Fong

IPC: H01L27/11582 ,  H01L29/49 ,  H01L29/423

Abstract: A non-volatile “reverse memory cell” suitable for use as a building block for a 3-dimensional memory array includes a charge-trapping layer which is programmed or charged through gate-injection, rather than channel-injection. Such a reverse cell may be implemented as either an n-channel memory cell or a p-channel memory cell, without incurring design or process penalties, or any complexity in programming or erase operations. Furthermore, all reading, programming, erase, program-inhibiting operations may be carried out in the reverse memory cell using only positive or only negative voltages, thereby simplifying both the design and the power management operations.

公开(公告)号：US20190157296A1

公开(公告)日：2019-05-23

申请号：US16194225

申请日：2018-11-16

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Eli Harari ,  George Samachisa ,  Yupin Fong

IPC: H01L27/11582 ,  H01L29/49 ,  H01L29/423

Abstract: A non-volatile “reverse memory cell” suitable for use as a building block for a 3-dimensional memory array includes a charge-trapping layer which is programmed or charged through gate-injection, rather than channel-injection. Such a reverse cell may be implemented as either an n-channel memory cell or a p-channel memory cell, without incurring design or process penalties, or any complexity in programming or erase operations. Furthermore, all reading, programming, erase, program-inhibiting operations may be carried out in the reverse memory cell using only positive or only negative voltages, thereby simplifying both the design and the power management operations.