ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS
Abstract:
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
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