- 专利标题： FINFET GATE CUT AFTER DUMMY GATE REMOVAL
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申请号： US16244493申请日： 2019-01-10
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公开(公告)号： US20190189517A1公开(公告)日： 2019-06-20
- 发明人: John R. Sporre , Siva Kanakasabapathy , Andrew M. Greene , Jeffrey Shearer , Nicole A. Saulnier
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L25/065 ; H01L21/02 ; H01L27/088
摘要：
Semiconductor devices include a first semiconductor fin. A first gate stack is formed over the first semiconductor fin. Source and drain regions are formed on respective sides of the first gate stack. An interlayer dielectric is formed around the first gate stack. A gate cut plug is formed from a dielectric material at an end of the first gate stack.
公开/授权文献
- US10600868B2 FinFET gate cut after dummy gate removal 公开/授权日：2020-03-24
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