- 专利标题： SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE
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申请号： US16181727申请日： 2018-11-06
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公开(公告)号： US20190189609A1公开(公告)日： 2019-06-20
- 发明人: SHUN-LI CHEN , CHUNG-TE LIN , HUI-ZHONG ZHUANG , PIN-DAI SUE , JUNG-CHAN YANG
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L27/092 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L21/8238 ; H01L21/285
摘要：
A semiconductor device includes a fin structure, a first conductive line, a second conductive line and a first conductive rail. The fin structure is disposed on a substrate. The first conductive line is arranged to wrap a first portion of the fin structure. The second conductive line is attached on a second portion of the fin structure. The second portion is different from the first portion. The first conductive rail is disposed in a same layer as the first conductive line and the second conductive line on the substrate. The first conductive rail is attached on one end of the first conductive line and one end of the second conductive line for electrically connecting the first conductive line and the second conductive line.
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