- 专利标题： FINFET INCLUDING TUNABLE FIN HEIGHT AND TUNABLE FIN WIDTH RATIO
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申请号： US16294117申请日： 2019-03-06
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公开(公告)号： US20190206868A1公开(公告)日： 2019-07-04
- 发明人: Xiuyu Cai , Qing Liu , Ruilong Xie , Chun-Chen Yeh
- 申请人： International Business Machines Corporation , GlobalFoundries, Inc. , STMicroelectronics, Inc.
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L29/06 ; H01L29/16 ; H01L21/8238 ; H01L21/033 ; H01L21/308 ; H01L29/78 ; H01L29/165 ; H01L29/10 ; H01L27/12 ; H01L21/84
摘要：
A semiconductor substrate includes a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to define a height. A plurality of hetero semiconductor fins includes an epitaxial material formed on a first region of the bulk substrate layer. A plurality of non-hetero semiconductor fins is formed on a second region of the bulk substrate layer different from the first region. The non-hetero semiconductor fins are integrally formed from the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.
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