发明申请
- 专利标题： STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES
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申请号： US16378635申请日： 2019-04-09
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公开(公告)号： US20190233771A1公开(公告)日： 2019-08-01
- 发明人: Atsushi Mizutani , William A. Wojtczak , Yasuo Sugishima
- 申请人： Fujifilm Electronic Materials U.S.A., Inc.
- 主分类号： C11D11/00
- IPC分类号： C11D11/00 ; C11D3/30 ; H01L21/311 ; G03F7/42 ; C11D3/43 ; C11D3/00 ; C11D3/28 ; C11D3/20 ; C11D3/34
摘要：
This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.