Invention Application
- Patent Title: GROUP 13 NITRIDE LAYER, COMPOSITE SUBSTRATE, AND FUNCTIONAL ELEMENT
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Application No.: US16385380Application Date: 2019-04-16
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Publication No.: US20190242029A1Publication Date: 2019-08-08
- Inventor: Yoshinori ISODA , Suguru NOGUCHI , Tetsuya UCHIKAWA , Takayuki HIRAO , Takanao SHIMODAIRA , Katsuhiro IMAI
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya-City
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Nagoya-City
- Priority: JP2016-211564 20161028
- Main IPC: C30B29/40
- IPC: C30B29/40 ; H01L33/32 ; H01L33/00
Abstract:
It is provided a layer of a nitride of a group 13 element having a first main face and second main face. The layer of the nitride of the group 13 element includes a first void-depleted layer provided on the side of the first main face, a second void-depleted layer provided on the side of the second main face, and the void-distributed layer provided between the first void-depleted layer and second void-depleted layer.
Public/Granted literature
- US11035055B2 Group 13 nitride layer, composite substrate, and functional element Public/Granted day:2021-06-15
Information query
IPC分类:
