- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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申请号： US16319975申请日： 2016-10-24
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公开(公告)号： US20190267297A1公开(公告)日： 2019-08-29
- 发明人: Naoki YOSHIMATSU , Osamu USUI , Yuji IMOTO
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 国际申请： PCT/JP2016/081492 WO 20161024
- 主分类号： H01L23/057
- IPC分类号： H01L23/057 ; H01L23/31 ; H01L23/498 ; H01L21/48 ; H01L21/56
摘要：
First and second electrodes (12,13) are provided on an upper surface of the semiconductor chip (9) and spaced apart from each other. A wiring member (15) includes a first joint (15a) bonded to the first electrode (12) and a second joint (15b) bonded to the second electrode (13). Resin (2) seals the semiconductor chip (9), the first and second electrodes (12,13) and the wiring member (15). A hole (18) extending through the wiring member (15) up and down is provided between the first joint (15a) and the second joint (15b).
公开/授权文献
- US10707141B2 Semiconductor device and manufacturing method thereof 公开/授权日：2020-07-07
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