Invention Application
- Patent Title: LOW COLLECTOR CONTACT RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS
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Application No.: US15937068Application Date: 2018-03-27
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Publication No.: US20190305094A1Publication Date: 2019-10-03
- Inventor: Gengming TAO , Bin YANG , Xia LI
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/737 ; H01L29/205 ; H01L29/08 ; H01L29/10 ; H01L29/45 ; H01L29/66 ; H01L21/306 ; H01L21/308 ; H01L21/285
Abstract:
In certain aspects, a heterojunction bipolar transistor (HBT) comprises a collector mesa, a base mesa on the collector mesa, and an emitter mesa on the base mesa. The base mesa has a tapered sidewall tapering from a wide bottom to a narrow top. The HBT further comprises a collector contact on a portion of the collector mesa and extending to a portion of the tapered sidewall of the base mesa.
Information query
IPC分类:
