Invention Application
- Patent Title: Method of Processing a Silicon Carbide Containing Crystalline Substrate, Silicon Carbide Chip, and Processing Chamber
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Application No.: US16374265Application Date: 2019-04-03
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Publication No.: US20190308274A1Publication Date: 2019-10-10
- Inventor: Michael Roesner , Markus Menath , Gudrun Stranzl
- Applicant: Infineon Technologies AG
- Priority: DE102018107922.2 20180404
- Main IPC: B23K26/362
- IPC: B23K26/362 ; B23K26/40 ; H01L21/67 ; H01L21/3065 ; H01L29/16
Abstract:
A method of processing silicon carbide containing crystalline substrate is provided. The method includes pyrolyzing a surface of the silicon carbide containing crystalline substrate to produce a silicon and carbon containing debris layer over the silicon carbide containing crystalline substrate, and removing the silicon and carbon containing debris layer, wherein the pyrolyzing and the removing is repeated at least once.
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