- 专利标题: INTEGRATED CIRCUIT DEVICE WITH CRENELLATED METAL TRACE LAYOUT
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申请号: US16348105申请日: 2016-12-07
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公开(公告)号: US20190312023A1公开(公告)日: 2019-10-10
- 发明人: Patrick Morrow , Mauro J. Kobrinsky , Mark T. Bohr , Tahir Ghani , Rishabh Mehandru , Ranjith Kumar
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 国际申请: PCT/US2016/065423 WO 20161207
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L27/088 ; H01L29/417 ; H01L21/768
摘要:
Integrated circuit (IC) cell architectures including a crenellated interconnect trace layout. A crenellated trace layout may be employed where an IC cell includes transistor having a source/drain terminal interconnected through a back-side (3D) routing scheme that reduces front-side routing density for a given transistor footprint. In the crenellated layout, adjacent interconnect traces or tracks may have their ends staggered according to a crenellation phase for the cell. Crenellated tracks may intersect one cell boundary with adjacent tracks intersecting an opposite cell boundary. Track ends may be offset by at least the width of an underlying orthogonal interconnect trace. Crenellated track ends may be offset by the width of an underlying orthogonal interconnect trace and half a spacing between adjacent orthogonal interconnect traces.
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