- 专利标题： DEVICE HAVING WORK FUNCTION METAL STACK AND METHOD OF FORMING THE SAME
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申请号： US15965635申请日： 2018-04-27
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公开(公告)号： US20190333769A1公开(公告)日： 2019-10-31
- 发明人: Yen-Yu CHEN , Yu-Chi LU , Chih-Pin TSAO , Shih-Hsun CHANG
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/49
摘要：
A method is provided. The method includes the following operations. A dielectric layer is deposited over a substrate. Then, a first work function metal layer is deposited over the dielectric layer. Next, a dummy layer is deposited over the first work function metal layer. Afterwards, an impurity is introduced into the first work function metal layer. Then, the dummy layer is etched. Next, a second work function metal layer is deposited over the first work function metal layer.
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