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    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    3.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210305047A1

    公开(公告)日：2021-09-30

    申请号：US17150356

    申请日：2021-01-15

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    发明人： Jia-Lin WEI ,  Ming-Hui WENG ,  Chih-Cheng LIU ,  Yi-Chen KUO ,  Yen-Yu CHEN ,  Yahru CHENG ,  Jr-Hung LI ,  Ching-Yu CHANG ,  Tze-Liang LEE ,  Chi-Ming YANG

    IPC分类号： H01L21/033 ,  H01L21/308 ,  G03F1/22 ,  G03F7/20

    摘要： A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

    GATE STRUCTURES FOR SEMICONDUCTOR DEVICES
    5.
    发明申请
    GATE STRUCTURES FOR SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20210134951A1

    公开(公告)日：2021-05-06

    申请号：US16835916

    申请日：2020-03-31

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Yen-Yu CHEN ,  Chung-Liang Cheng

    IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L27/088 ,  H01L29/51 ,  H01L21/8234

    摘要： A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The semiconductor device includes first and second pair of source/drain regions disposed on a substrate, first and second nanostructured channel regions, and first and second gate structures with effective work function values different from each other. The first and second gate structures include first and second high-K gate dielectric layers, first and second barrier metal layers with thicknesses different from each, first and second work function metal (WFM) oxide layers with thicknesses substantially equal to each other disposed on the first and second barrier metal layers, respectively, a first dipole layer disposed between the first WFM oxide layer and the first barrier metal layer, and a second dipole layer disposed between the second WFM oxide layer and the second barrier metal layer.

    INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME
    8.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME 审中-公开

    公开(公告)号：US20190067188A1

    公开(公告)日：2019-02-28

    申请号：US16058290

    申请日：2018-08-08

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Chung-Liang CHENG ,  Shih Wei BIH ,  Yen-Yu CHEN

    IPC分类号： H01L23/522 ,  H01L21/768

    摘要： A semiconductor device includes: a first conductive structure having sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and an insulation layer disposed between at least one of the sidewalls of the first conductive structure and respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.

    PHOTORESIST NOZZLE DEVICE AND PHOTORESIST SUPPLY SYSTEM
    10.
    发明申请
    PHOTORESIST NOZZLE DEVICE AND PHOTORESIST SUPPLY SYSTEM 审中-公开
    光电喷嘴装置和光电供应系统

    公开(公告)号：US20150179483A1

    公开(公告)日：2015-06-25

    申请号：US14135017

    申请日：2013-12-19

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Kuo-Shu TSENG ,  You-Feng CHEN ,  Yen-Yu CHEN

    IPC分类号： H01L21/67 ,  B05B7/24

    CPC分类号： H01L21/6715

    摘要： Embodiments of a photoresist supply system including a photoresist nozzle device are provided. The photoresist nozzle device includes a tube including a first segment, a curved segment connected to the first segment, and a second segment connected to the curved segment. The photoresist nozzle device also includes a nozzle connected to the second segment.

    摘要翻译： 提供了包括光致抗蚀剂喷嘴装置的光致抗蚀剂供应系统的实施例。 光致抗蚀剂喷嘴装置包括管，其包括第一段，连接到第一段的弯曲段和连接到弯曲段的第二段。 光致抗蚀剂喷嘴装置还包括连接到第二段的喷嘴。