- 专利标题: Increasing Source/Drain Dopant Concentration to Reduced Resistance
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申请号: US15967672申请日: 2018-05-01
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公开(公告)号: US20190341472A1公开(公告)日: 2019-11-07
- 发明人: Yi-Jing Lee , Ming-Hua Yu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L29/06 ; H01L21/02 ; H01L29/08 ; H01L29/78 ; H01L29/167 ; H01L29/36
摘要:
A method includes recessing a semiconductor fin to form a recess, wherein the semiconductor fin protrudes higher than isolation regions on opposite sides of the semiconductor fin, and performing a first epitaxy to grow a first epitaxy layer extending into the recess. The first epitaxy is performed using a first process gas comprising a silicon-containing gas, silane, and a phosphorous-containing gas. The first epitaxy layer has a first phosphorous atomic percentage. The method further includes performing a second epitaxy to grow a second epitaxy layer extending into the recess and over the first epitaxy layer. The second epitaxy is performed using a second process gas comprising the silicon-containing gas, silane, and the phosphorous-containing gas. The second epitaxy layer has a second phosphorous atomic percentage higher than the first phosphorous atomic percentage.
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