Invention Application
- Patent Title: MAGNETORESISTANCE EFFECT ELEMENT
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Application No.: US16412727Application Date: 2019-05-15
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Publication No.: US20190355898A1Publication Date: 2019-11-21
- Inventor: Katsuyuki NAKADA
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2018-094448 20180516
- Main IPC: H01L43/02
- IPC: H01L43/02
Abstract:
A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element.
Public/Granted literature
- US11056639B2 Magnetoresistance effect element Public/Granted day:2021-07-06
Information query
IPC分类:
