公开(公告)号：US20220278271A1

公开(公告)日：2022-09-01

申请号：US17631571

申请日：2020-06-24

Applicant: TDK CORPORATION

Inventor： Shinto ICHIKAWA ,  Tsuyoshi SUZUKI ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: H01L43/10 ,  H01L43/08

Abstract: In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.

公开(公告)号：US20210165058A1

公开(公告)日：2021-06-03

申请号：US17148686

申请日：2021-01-14

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: G01R33/09 ,  G01R33/12 ,  G11B5/39 ,  H01F10/32 ,  G11C11/16 ,  H01F10/193 ,  H01F10/30

Abstract: A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Niγ1Alγ2Xγ3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0

公开(公告)号：US20210159396A1

公开(公告)日：2021-05-27

申请号：US17168579

申请日：2021-02-05

Applicant: TDK CORPORATION

Inventor： Katsuyuki NAKADA ,  Shinto ICHIKAWA

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is interposed between the first and second ferromagnetic layers, wherein the tunnel barrier layer has a spinel structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, P, C, B, and Si, and in the compositional formula, X represents one or more elements selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0

公开(公告)号：US20200052194A1

公开(公告)日：2020-02-13

申请号：US16587178

申请日：2019-09-30

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA ,  Yoshitomo TANAKA

IPC: H01L43/08 ,  G11B5/39 ,  H01L45/00 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US20190355898A1

公开(公告)日：2019-11-21

申请号：US16412727

申请日：2019-05-15

Applicant: TDK CORPORATION

Inventor： Katsuyuki NAKADA

IPC: H01L43/02

Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element.

公开(公告)号：US20190094315A1

公开(公告)日：2019-03-28

申请号：US16138031

申请日：2018-09-21

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: G01R33/09 ,  G01R33/12 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32

Abstract: A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Niγ1Alγ2Xγ3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0

公开(公告)号：US20190019942A1

公开(公告)日：2019-01-17

申请号：US16025171

申请日：2018-07-02

Applicant: TDK CORPORATION

Inventor： Katsuyuki NAKADA ,  Shinto ICHIKAWA

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is interposed between the first and second ferromagnetic layers, wherein the tunnel barrier layer has a spinel structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, P, C, B, and Si, and in the compositional formula, X represents one or more elements selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0

公开(公告)号：US20180351089A1

公开(公告)日：2018-12-06

申请号：US15993783

申请日：2018-05-31

Applicant: TDK CORPORATION

Inventor： Eiji SUZUKI ,  Katsuyuki NAKADA

IPC: H01L43/08 ,  H01L43/10 ,  H01F10/32

CPC classification number: H01L43/08 ,  G11C11/16 ,  H01F10/3268 ,  H01F41/046 ,  H01L43/10

Abstract: A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein a surface of the multiferroic layer on the ferromagnetic layer side includes a first region, a crystalline phase of which is rhombohedral, and a second region, a crystalline phase of which is tetragonal.

公开(公告)号：US20180294404A1

公开(公告)日：2018-10-11

申请号：US16003524

申请日：2018-06-08

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic metal layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer and the second ferromagnetic layer include a Heusler alloy consisting of a CoMnSi alloy. A ratio x of Mn with respect to Co2 in each of the first ferromagnetic layer and the second ferromagnetic layer is 0.7≤x≤1.7. Compositions of the first ferromagnetic layer and the second ferromagnetic layer are different from each other.

公开(公告)号：US20180254409A1

公开(公告)日：2018-09-06

申请号：US15911689

申请日：2018-03-05

Applicant: TDK CORPORATION

Inventor： Katsuyuki NAKADA ,  Kazuumi INUBUSHI

IPC: H01L43/10 ,  H01L43/08 ,  H01F1/00

CPC classification number: H01L43/10 ,  H01F1/0036 ,  H01F10/1936 ,  H01F10/3268 ,  H01L43/08

Abstract: A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.