MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210159396A1

    公开(公告)日:2021-05-27

    申请号:US17168579

    申请日:2021-02-05

    Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is interposed between the first and second ferromagnetic layers, wherein the tunnel barrier layer has a spinel structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, P, C, B, and Si, and in the compositional formula, X represents one or more elements selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0

    MAGNETORESISTANCE EFFECT ELEMENT
    5.
    发明申请

    公开(公告)号:US20190355898A1

    公开(公告)日:2019-11-21

    申请号:US16412727

    申请日:2019-05-15

    Inventor: Katsuyuki NAKADA

    Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a tunnel barrier layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer is an oxide having a spinel structure, and the tunnel barrier layer includes a magnetic element as an additional element.

    MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20190019942A1

    公开(公告)日:2019-01-17

    申请号:US16025171

    申请日:2018-07-02

    Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is interposed between the first and second ferromagnetic layers, wherein the tunnel barrier layer has a spinel structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, P, C, B, and Si, and in the compositional formula, X represents one or more elements selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0

    MAGNETORESISTIVE EFFECT ELEMENT
    9.
    发明申请

    公开(公告)号:US20180294404A1

    公开(公告)日:2018-10-11

    申请号:US16003524

    申请日:2018-06-08

    CPC classification number: H01L43/08 H01L43/02 H01L43/10

    Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic metal layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer and the second ferromagnetic layer include a Heusler alloy consisting of a CoMnSi alloy. A ratio x of Mn with respect to Co2 in each of the first ferromagnetic layer and the second ferromagnetic layer is 0.7≤x≤1.7. Compositions of the first ferromagnetic layer and the second ferromagnetic layer are different from each other.

    MAGNETORESISTANCE EFFECT ELEMENT
    10.
    发明申请

    公开(公告)号:US20180254409A1

    公开(公告)日:2018-09-06

    申请号:US15911689

    申请日:2018-03-05

    Abstract: A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.

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