- 专利标题： APPLICATION OF QUANTUM DOT COMPOSITE MATERIAL
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申请号： US16548901申请日： 2019-08-23
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公开(公告)号： US20190383990A1公开(公告)日： 2019-12-19
- 发明人: Hung-Chia Wang , Xue-Jie Zhang , Shin-Ying Lin , An-Cih Tang , Ru-Shi Liu , Tzong-Liang Tsai , Yu-Chun Lee , Ching-Yi Chen , Hung-Chun Tong
- 申请人： Lextar Electronics Corporation
- 优先权： TW105132612 20161007
- 主分类号： F21V8/00
- IPC分类号： F21V8/00 ; H01L33/62 ; H01L33/56 ; H01L33/50 ; H01L25/075 ; C09K11/66
摘要：
A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0≤a≤1, 0≤b≤1.
公开/授权文献
- US10816716B2 Application of quantum dot composite material 公开/授权日：2020-10-27
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