发明申请
- 专利标题： LOW VOLTAGE MEMORY DEVICE
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申请号： US16415554申请日： 2019-05-17
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公开(公告)号： US20190385672A1公开(公告)日： 2019-12-19
- 发明人: Mahmut Sinangil , Yen-Huei Chen , Yen-Ting Lin , Hung-Jen Liao , Jonathan Tsung-Yung Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： G11C11/419
- IPC分类号： G11C11/419 ; G11C11/418
摘要：
A twelve-transistor (12T) memory cell for a memory device that includes a transmission gate, a cross-coupled inverter circuit operably connected to the transmission gate, and a tri-state inverter operably connected to the cross-coupled inverter circuit. The cross-coupled inverter includes another tri-state inverter cross-coupled to an inverter circuit. Various operations for the 12T memory cell, as well as circuitry to perform the operations, are disclosed.
公开/授权文献
- US10803928B2 Low voltage memory device 公开/授权日：2020-10-13
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