Invention Application
- Patent Title: PROCESS FOR MANUFACTURING A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYSTALLINE STRUCTURE
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Application No.: US16481767Application Date: 2018-01-31
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Publication No.: US20190390366A1Publication Date: 2019-12-26
- Inventor: Bruno Ghyselen , Jean-Marc Bethoux
- Applicant: Soitec
- Priority: FR1750868 20170202
- International Application: PCT/FR2018/050217 WO 20180131
- Main IPC: C30B25/18
- IPC: C30B25/18 ; C30B29/02 ; C30B29/66
Abstract:
A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.
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