Invention Application
- Patent Title: STACKED SPIRAL INDUCTOR
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Application No.: US16481600Application Date: 2018-07-03
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Publication No.: US20200005980A1Publication Date: 2020-01-02
- Inventor: Congying DONG
- Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Applicant Address: CN Wuxi New District, Jiangsu
- Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.
- Current Assignee Address: CN Wuxi New District, Jiangsu
- Priority: CN201710534700.2 20170703
- International Application: PCT/CN2018/094241 WO 20180703
- Main IPC: H01F17/00
- IPC: H01F17/00 ; H01L23/522

Abstract:
A stacked spiral inductor, comprising: a substrate, and multiple stacked insulating layers and inductive metal layers formed on the substrate by means of a semiconductor process. Each inductive metal layer comprises a conductive coil in a shape of a spiral and a through hole area used for connecting two adjacent inductive metal layers. The conductive coils of the inductive metal layers have a common coil center. In two adjacent inductive metal layers, the conductive coil of the lower inductive metal layer is retracted toward the coil center with respect to the conductive coil of the upper inductive metal layer.
Information query
IPC分类:
H | 电学 |
H01 | 基本电气元件 |
H01F | 磁体;电感;变压器;磁性材料的选择 |
H01F17/00 | 信号类型的固定电感器 |