An integrated circuit (e.g., a stacked capacitor) achieves higher capacitor density without additional area consumption. The integrated circuit includes a metal-oxide-semiconductor capacitor (MOSCAP), a metal-oxide-metal capacitor (MOMCAP) and a metal-insulator-metal capacitor (MIMCAP) stacked together. The MOSCAP includes a gate and source/drain (S/D) regions. The MOMCAP is included in back-end-of-line (BEOL) layers over the MOSCAP or supported by the MOSCAP.