- 专利标题: Grain Size Tuning for Radiation Resistance
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申请号: US16224302申请日: 2018-12-18
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公开(公告)号: US20200024729A1公开(公告)日: 2020-01-23
- 发明人: Mitra Lenore Taheri , Greg Vetterick
- 申请人: Mitra Lenore Taheri , Greg Vetterick
- 申请人地址: US PA Philadelphia
- 专利权人: Drexel University
- 当前专利权人: Drexel University
- 当前专利权人地址: US PA Philadelphia
- 主分类号: C23C14/58
- IPC分类号: C23C14/58 ; C23C14/16 ; C23C14/34 ; C23C14/35 ; C23C14/54
摘要:
A process for producing a radiation resistant nanocrystalline material having a polycrystalline microstructure from a starting material selected from metals and metal alloys. The process including depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature from about room temperature to about 850° C. to produce the nanocrystalline material. The process may also include heating the nanocrystalline material to a temperature of from about 450° C. to about 800° C. at a rate of temperature increase of from about 2° C./minute to about 30° C./minute; and maintaining the nanocrystalline material at the temperature of from about 450° C. to about 800° C. for a period from about 5 minutes to about 35 minutes. The nanocrystalline materials produced by the above process are also described. The nanocrystalline materials produced by the process are resistant to radiation damage.
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