- 专利标题: PATTERNING PLATINUM BY ALLOYING AND ETCHING PLATINUM ALLOY
-
申请号: US16523867申请日: 2019-07-26
-
公开(公告)号: US20200035500A1公开(公告)日: 2020-01-30
- 发明人: Sebastian Meier , Helmut Rinck
- 申请人: Texas Instruments Incorporated
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; H01L21/308 ; H01L21/24 ; C23F1/30 ; C23F1/44
摘要:
There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.
公开/授权文献
- US11011381B2 Patterning platinum by alloying and etching platinum alloy 公开/授权日:2021-05-18
信息查询
IPC分类: