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    Methods For Wet Atomic Layer Etching Of Ruthenium
    1.
    发明申请
    Methods For Wet Atomic Layer Etching Of Ruthenium 有权

    公开(公告)号：US20230118554A1

    公开(公告)日：2023-04-20

    申请号：US17674579

    申请日：2022-02-17

    申请人： Tokyo Electron Limited

    发明人： Paul Abel

    IPC分类号： C23F1/30

    摘要： The present disclosure provides a new wet atomic layer etch (ALE) process for etching ruthenium. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching ruthenium in a wet ALE process. Unlike conventional etch processes for ruthenium, the wet ALE process described herein for etching ruthenium is metal-free, cost-effective and improves surface roughness during etching.

    PATTERNING PLATINUM BY ALLOYING AND ETCHING PLATINUM ALLOY
    6.
    发明申请
    PATTERNING PLATINUM BY ALLOYING AND ETCHING PLATINUM ALLOY 有权

    公开(公告)号：US20210242029A1

    公开(公告)日：2021-08-05

    申请号：US17234833

    申请日：2021-04-20

    申请人： Texas Instruments Incorporated

    发明人： Sebastian Meier ,  Helmut Rinck

    IPC分类号： H01L21/306 ,  H01L21/308 ,  C23F1/44 ,  C23F1/30 ,  H01L21/24

    摘要： There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    7.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权

    公开(公告)号：US20210175093A1

    公开(公告)日：2021-06-10

    申请号：US17104086

    申请日：2020-11-25

    申请人： Tokyo Electron Limited

    发明人： Taisei Inoue ,  Hiroki Sakurai ,  Takashi Nakazawa

    IPC分类号： H01L21/3213 ,  C23F1/30 ,  H01L21/67

    摘要： A substrate processing apparatus includes a temperature detector, a calculation unit and an execution unit. The temperature detector is configured to detect a temperature of a substrate on which a processing liquid is discharged. The calculation unit is configured to calculate, by using a given calculation formula, an etching amount of the substrate based on the temperature detected by the temperature detector. The execution unit configured to perform an etching processing on the substrate by the processing liquid based on the etching amount.

    PRODUCTION METHOD FOR A RING ELECTRODE
    10.
    发明申请
    PRODUCTION METHOD FOR A RING ELECTRODE 审中-公开

    公开(公告)号：US20190255317A1

    公开(公告)日：2019-08-22

    申请号：US16278275

    申请日：2019-02-18

    申请人： Heraeus Deutschland GmbH & Co. KG

    发明人： Christiane Leitold ,  Oliver Keitel ,  Hoang-Minh LE ,  Jörg Krenzer

    IPC分类号： A61N1/05 ,  C23F1/30 ,  C23F1/18 ,  A61N1/36 ,  A61N1/362 ,  A61N1/375 ,  B21C1/22 ,  B21C1/00

    摘要： One aspect relates to a production method for a ring electrode, to a ring electrode, and to an electrode system. One method for the ring electrode includes providing an outer element, including an outer tube, providing a first inner element, including a first inner tube having a first core of a sacrificial material, providing a second inner element, including a second core of a sacrificial material, forming a composite tube by arranging the first inner element and the second inner element inside the outer element, the first inner element and the second inner element being arranged off-center with respect to one another, drawing the composite tube in a longitudinal direction of the composite tube, separating a composite tube disk from the composite tube, removing the sacrificial material of the first core, and removing the sacrificial material of the second core in order to obtain a contacting opening in the ring electrode.