- 专利标题： OXIDE SINTERED MATERIAL AND METHOD FOR MANUFACTURING THE SAME, SPUTTERING TARGET, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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申请号： US16347152申请日： 2017-06-26
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公开(公告)号： US20200062651A1公开(公告)日： 2020-02-27
- 发明人: Miki MIYANAGA , Kenichi WATATANI , Hideaki AWATA , Kazuya TOKUDA , Aiko TOMINAGA
- 申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2016-216263 20161104
- 国际申请： PCT/JP2017/023375 WO 20170626
- 主分类号： C04B35/01
- IPC分类号： C04B35/01 ; C23C14/34 ; C23C14/08 ; H01L21/02
摘要：
Provided are: an oxide sintered material including an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, wherein the roundness of crystal particles composed of the ZnWO4 crystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.
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