- 专利标题： Semiconductor Devices Employing a Barrier Layer
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申请号： US16672180申请日： 2019-11-01
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公开(公告)号： US20200066633A1公开(公告)日： 2020-02-27
- 发明人: Ying-Hsueh Chang Chien , Yu-Ming Lee , Man-Kit Leung , Chi-Ming Yang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L23/532 ; H01L21/768
摘要：
A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
公开/授权文献
- US11264321B2 Semiconductor devices employing a barrier layer 公开/授权日：2022-03-01
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