- 专利标题： FOUR-OR-MORE-COMPONENT-BASED CHALCOGENIDE PHASE-CHANGE MATERIAL AND MEMORY DEVICE COMPRISING THE SAME
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申请号： US16201295申请日： 2018-11-27
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公开(公告)号： US20200083445A1公开(公告)日： 2020-03-12
- 发明人: Young Min JHON , Yong Tae KIM , Chun Keun KIM , Young-Hwan KIM , Minho CHOI , Sehyun KWON
- 申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- 优先权： KR10-2018-0107352 20180907
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/24
摘要：
The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.
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