公开(公告)号：US20190333779A1

公开(公告)日：2019-10-31

申请号：US16270594

申请日：2019-02-08

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Gumin KANG ,  Il Ki HAN ,  S. Joon KWON ,  Young-Hwan KIM ,  Hyungduk KO ,  Chun Keun KIM

IPC: H01L21/321 ,  H01L21/66 ,  H01L21/306 ,  H01L21/3105

Abstract: A method for surface planarization of an object using a light source of a specific wavelength according to an embodiment includes: providing an object in a main chamber; injecting an etching gas into the main chamber; inputting the light source of a specific wavelength onto a surface of the object; and controlling a temperature of the object. According to the method, it is possible to minimize the side effects such as scratches or contamination of the sample that occur in a conventional chemical-mechanical planarization process. In addition, it is possible to allow precise planarization in nanometers (nm) and simultaneously perform planarization to a side surface of a device as well as a large-sized surface, thereby reducing cost and time required for the planarization process. Moreover, since the surface roughness and the electrical conductivity are improved, it is possible to increase the efficiency and output of the LED device.

公开(公告)号：US20200083445A1

公开(公告)日：2020-03-12

申请号：US16201295

申请日：2018-11-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min JHON ,  Yong Tae KIM ,  Chun Keun KIM ,  Young-Hwan KIM ,  Minho CHOI ,  Sehyun KWON

IPC: H01L45/00 ,  H01L27/24

Abstract: The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b  [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.