专利检索 ap:("KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY") AND inv:"Sehyun KWON" 第 1 页

1.

发明申请
FOUR-OR-MORE-COMPONENT-BASED CHALCOGENIDE PHASE-CHANGE MATERIAL AND MEMORY DEVICE COMPRISING THE SAME 审中-公开

公开(公告)号：US20200083445A1

公开(公告)日：2020-03-12

申请号：US16201295

申请日：2018-11-27

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Young Min JHON , Yong Tae KIM , Chun Keun KIM , Young-Hwan KIM , Minho CHOI , Sehyun KWON

IPC分类号： H01L45/00 , H01L27/24

摘要： The present invention provides a chalcogenide phase-change material represented by the following Chemical Formula 1, and a memory device including the same. Ma(AxSbyTe(1-x-y))b [Chemical Formula 1] In Chemical Formula 1, M denotes an element having a doping formation energy ΔEf in a range of −3 eV/atom to 0.5 eV/atom, A denotes indium (In) or germanium (Ge), a and b are each positive numbers and selected to satisfy a+b=1, x ranges from 0.15 to 0.3, and y ranges from 0.05 to 0.25.