- 专利标题： SELF-ALIGNED PATTERN FORMATION FOR A SEMICONDUCTOR DEVICE
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申请号： US16693668申请日： 2019-11-25
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公开(公告)号： US20200090985A1公开(公告)日： 2020-03-19
- 发明人: Sean D. Burns , Lawrence A. Clevenger , Nelson M. Felix , Sivananda K. Kanakasabapathy , Christopher J. Penny , Nicole Saulnier
- 申请人： International Business Machines Corporation
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/528
摘要：
A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.
公开/授权文献
- US11646221B2 Self-aligned pattern formation for a semiconductor device 公开/授权日：2023-05-09
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