Invention Application
- Patent Title: Surface Modification Layer for Conductive Feature Formation
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Application No.: US16145457Application Date: 2018-09-28
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Publication No.: US20200105587A1Publication Date: 2020-04-02
- Inventor: Jian-Jou Lian , Kuo-Bin Huang , Neng-Jye Yang , Li-Min Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/306 ; H01L21/48 ; H01L21/02

Abstract:
Embodiments described herein relate generally to methods for forming a conductive feature in a dielectric layer in semiconductor processing and structures formed thereby. In some embodiments, a structure includes a dielectric layer over a substrate, a surface modification layer, and a conductive feature. The dielectric layer has a sidewall. The surface modification layer is along the sidewall, and the surface modification layer includes phosphorous and carbon. The conductive feature is along the surface modification layer.
Public/Granted literature
- US10699944B2 Surface modification layer for conductive feature formation Public/Granted day:2020-06-30
Information query
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