Invention Application
- Patent Title: VERTICAL TRANSPORT FET HAVING MULTIPLE THRESHOLD VOLTAGES WITH ZERO-THICKNESS VARIATION OF WORK FUNCTION METAL
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Application No.: US16178725Application Date: 2018-11-02
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Publication No.: US20200144378A1Publication Date: 2020-05-07
- Inventor: CHOONGHYUN LEE , KANGGUO CHENG , JUNTAO LI , SHOGO MOCHIZUKI
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L27/088 ; H01L29/10 ; H01L21/8234
Abstract:
A technique relates to a semiconductor device. Fins are formed of varying concentrations of germanium. Gate material is formed on the fins. Source or drain (S/D) regions are adjacent to the fins, and transistor devices include the fins.
Public/Granted literature
Information query
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