Invention Grant
- Patent Title: Vertical transport FET having multiple threshold voltages with zero-thickness variation of work function metal
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Application No.: US16178725Application Date: 2018-11-02
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Publication No.: US10818756B2Publication Date: 2020-10-27
- Inventor: Choonghyun Lee , Kangguo Cheng , Juntao Li , Shogo Mochizuki
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L21/8234 ; H01L29/10 ; H01L27/088 ; H01L29/66
Abstract:
A technique relates to a semiconductor device. Fins are formed of varying concentrations of germanium. Gate material is formed on the fins. Source or drain (S/D) regions are adjacent to the fins, and transistor devices include the fins.
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Information query
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