Invention Application
- Patent Title: INTERLAYER BALLISTIC TRANSPORT SEMICONDUCTOR DEVICES
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Application No.: US16177877Application Date: 2018-11-01
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Publication No.: US20200144404A1Publication Date: 2020-05-07
- Inventor: Joshua Dillon , Siva P. Adusumilli , Jagar Singh , Anthony Stamper , Laura Schutz
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L29/872

Abstract:
One device disclosed herein includes, among other things, first and second conductive features embedded in a first dielectric layer, a cap layer positioned above the first dielectric layer, a ballistic transport material contacting the first conductive member and positioned above a portion of the first dielectric layer, and first and second contacts contacting the first and second conductive features.
Public/Granted literature
- US10833183B2 Interlayer ballistic transport semiconductor devices Public/Granted day:2020-11-10
Information query
IPC分类: