公开(公告)号：US10833183B2

公开(公告)日：2020-11-10

申请号：US16177877

申请日：2018-11-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Joshua Dillon ,  Siva P. Adusumilli ,  Jagar Singh ,  Anthony Stamper ,  Laura Schutz

IPC: H01L29/76 ,  H01L29/66 ,  H01L29/872

Abstract: One device disclosed herein includes, among other things, first and second conductive features embedded in a first dielectric layer, a cap layer positioned above the first dielectric layer, a ballistic transport material contacting the first conductive member and positioned above a portion of the first dielectric layer, and first and second contacts contacting the first and second conductive features.

公开(公告)号：US20200144404A1

公开(公告)日：2020-05-07

申请号：US16177877

申请日：2018-11-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Joshua Dillon ,  Siva P. Adusumilli ,  Jagar Singh ,  Anthony Stamper ,  Laura Schutz

IPC: H01L29/76 ,  H01L29/66 ,  H01L29/872

Abstract: One device disclosed herein includes, among other things, first and second conductive features embedded in a first dielectric layer, a cap layer positioned above the first dielectric layer, a ballistic transport material contacting the first conductive member and positioned above a portion of the first dielectric layer, and first and second contacts contacting the first and second conductive features.