Invention Application
- Patent Title: MATERIAL COMPOSITION AND METHODS THEREOF
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Application No.: US16723818Application Date: 2019-12-20
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Publication No.: US20200146154A1Publication Date: 2020-05-07
- Inventor: Siao-Shan WANG , Cheng-Han WU , Ching-Yu CHANG , Chin-Hsiang LIN
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H05K3/06
- IPC: H05K3/06 ; G03F7/00 ; G03F7/20 ; H01L21/027 ; G03F7/09 ; G03F7/40

Abstract:
Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.
Public/Granted literature
- US10863630B2 Material composition and methods thereof Public/Granted day:2020-12-08
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