公开(公告)号：US20180174830A1

公开(公告)日：2018-06-21

申请号：US15628355

申请日：2017-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan WANG ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/027 ,  H01L21/033 ,  G03F7/20 ,  H01L21/308 ,  H01L21/311

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.

公开(公告)号：US20210341837A1

公开(公告)日：2021-11-04

申请号：US17220705

申请日：2021-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Siao-Shan WANG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/027 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.

公开(公告)号：US20200146154A1

公开(公告)日：2020-05-07

申请号：US16723818

申请日：2019-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan WANG ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H05K3/06 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027 ,  G03F7/09 ,  G03F7/40

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.

公开(公告)号：US20190157073A1

公开(公告)日：2019-05-23

申请号：US16124063

申请日：2018-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hui WENG ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN ,  Siao-Shan WANG

IPC: H01L21/027 ,  H01L21/308 ,  G03F7/20

Abstract: Methods for forming a semiconductor structure including using a photoresist material are provided. The method for forming a semiconductor structure includes forming a material layer over a substrate and forming a photoresist layer over the material layer. The method for forming a semiconductor structure further includes performing an exposure process on the photoresist layer and developing the photoresist layer. In addition, the photoresist layer is made of a photoresist material comprising a photosensitive polymer, and the photosensitive polymer has a first photosensitive functional group bonding to a main chain of the photosensitive polymer and a first acid labile group bonding to the first photosensitive functional group.