- 专利标题: PIEZOELECTRIC MICROMACHINED ULTRASONIC TRANSDUCERS AND METHODS FOR FABRICATING THEREOF
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申请号: US16183822申请日: 2018-11-08
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公开(公告)号: US20200152697A1公开(公告)日: 2020-05-14
- 发明人: You Qian , Humberto Campanella-Pineda , Rakesh Kumar
- 申请人: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- 主分类号: H01L27/20
- IPC分类号: H01L27/20 ; H01L41/04 ; H01L41/047 ; H01L41/053 ; H01L41/08 ; H01L41/23 ; H01L41/29 ; H01L41/332 ; B06B1/02 ; B06B1/06
摘要:
According to various embodiments, a PMUT device may include a wafer, an active layer including a piezoelectric stack, an intermediate layer having a cavity therein where the intermediate layer is disposed between the wafer and the active layer such that the cavity is adjoining the piezoelectric stack. A via may be formed through the active layer and the intermediate layer to the wafer. A metallic layer may be disposed over the active layer and over surfaces of the via. The intermediate layer may include an interposing material surrounding the cavity, and may further include a sacrificial material surrounding the via. The sacrificial material may be different from the interposing material. The metallic layer may include a first member at least substantially overlapping the piezoelectric stack, a second member extending from the first member to the cavity, and a third member extending into the active layer to contact an electrode therein.
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