Invention Application
- Patent Title: IN-SITU BIAS VOLTAGE MEASUREMENT OF VCSELS
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Application No.: US16680404Application Date: 2019-11-11
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Publication No.: US20200153195A1Publication Date: 2020-05-14
- Inventor: Kevin M. Kupcho
- Applicant: TRILUMINA CORP.
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/042 ; G01R31/28

Abstract:
Systems, methods, and devices are described for in-situ testing of vertical-cavity surface-emitting lasers (VCSELs), VCSEL arrays or laser diodes (each a laser). Testing may comprise bias voltage measurements of one or more lasers. Embodiments may comprise one of a laser, a driver circuit providing a bipolar drive to the laser, and a sensing circuit to measure and/or monitor damage or degradation of the laser. The bipolar drive may comprise a pulsed forward bias output configured to produce a light output during an on-time of the laser, and a pulsed reverse bias output during an off-time of the pulsed forward bias output. The pulsed outputs may comprise a variable, chirped frequency. One or more of a reverse leakage current, and a junction temperature may be measured to monitor a state of health of the laser.
Public/Granted literature
- US11349277B2 In-situ bias voltage measurement of VCSELs Public/Granted day:2022-05-31
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