IN-SITU BIAS VOLTAGE MEASUREMENT OF VCSELS
    1.
    发明申请

    公开(公告)号:US20200153195A1

    公开(公告)日:2020-05-14

    申请号:US16680404

    申请日:2019-11-11

    Inventor: Kevin M. Kupcho

    Abstract: Systems, methods, and devices are described for in-situ testing of vertical-cavity surface-emitting lasers (VCSELs), VCSEL arrays or laser diodes (each a laser). Testing may comprise bias voltage measurements of one or more lasers. Embodiments may comprise one of a laser, a driver circuit providing a bipolar drive to the laser, and a sensing circuit to measure and/or monitor damage or degradation of the laser. The bipolar drive may comprise a pulsed forward bias output configured to produce a light output during an on-time of the laser, and a pulsed reverse bias output during an off-time of the pulsed forward bias output. The pulsed outputs may comprise a variable, chirped frequency. One or more of a reverse leakage current, and a junction temperature may be measured to monitor a state of health of the laser.

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