Invention Application
- Patent Title: OPTICAL SENSOR DEVICE WITH DEEP AND SHALLOW CONTROL ELECTRODES
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Application No.: US16747084Application Date: 2020-01-20
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Publication No.: US20200158841A1Publication Date: 2020-05-21
- Inventor: Stefano PARASCANDOLA , Henning FEICK , Matthias FRANKE , Dirk OFFENBERG , Jens PRIMA , Robert ROESSLER , Michael SOMMER
- Applicant: Infineon Technologies AG , pmdtechnologies ag
- Applicant Address: DE Neubiberg DE Siegen
- Assignee: Infineon Technologies AG,pmdtechnologies ag
- Current Assignee: Infineon Technologies AG,pmdtechnologies ag
- Current Assignee Address: DE Neubiberg DE Siegen
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@12f99350 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@57a719b2
- Main IPC: G01S7/4914
- IPC: G01S7/4914 ; H04N13/257 ; G01S17/36 ; H01L27/146 ; G01S7/4915

Abstract:
An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.
Public/Granted literature
- US11175389B2 Optical sensor device with deep and shallow control electrodes Public/Granted day:2021-11-16
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