公开(公告)号：US20180106892A1

公开(公告)日：2018-04-19

申请号：US15783062

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano PARASCANDOLA ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Jens PRIMA ,  Robert ROESSLER ,  Michael SOMMER

IPC: G01S7/491 ,  G01S17/36 ,  H01L27/146 ,  H04N13/02

CPC classification number: G01S7/4914 ,  G01S7/4915 ,  G01S17/36 ,  H01L27/14603 ,  H04N13/257

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate with a conversion region configured to convert at least a portion of the electromagnetic signal into photo-generated charge carriers. A deep control electrode is formed in a trench extending into the semiconductor substrate. The deep control electrode extends deeper into the semiconductor substrate than a shallow control electrode. A control circuit is configured to apply to the deep control electrode and to the shallow control electrode varying potentials having a fixed phase relationship to each other, to generate electric potential distributions in the conversion region, by which the photo-generated charge carriers in the conversion region are directed. The directed photo-generated charge carriers are detected at at least one readout node.

公开(公告)号：US20200158841A1

公开(公告)日：2020-05-21

申请号：US16747084

申请日：2020-01-20

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano PARASCANDOLA ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Jens PRIMA ,  Robert ROESSLER ,  Michael SOMMER

IPC: G01S7/4914 ,  H04N13/257 ,  G01S17/36 ,  H01L27/146 ,  G01S7/4915

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.

公开(公告)号：US20180108692A1

公开(公告)日：2018-04-19

申请号：US15783071

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Robert ROESSLER ,  Henning FEICK ,  Matthias FRANKE ,  Dirk OFFENBERG ,  Stefano PARASCANDOLA ,  Jens PRIMA

IPC: H01L27/146 ,  G01S17/08 ,  H01L23/48 ,  H01L31/0232 ,  H01L31/101 ,  H01L31/02

CPC classification number: H01L27/14609 ,  G01S7/4914 ,  G01S17/08 ,  G01S17/36 ,  H01L23/481 ,  H01L27/14636 ,  H01L31/02024 ,  H01L31/02325 ,  H01L31/101

Abstract: An optical sensor device includes a semiconductor substrate comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, wherein the doping region is adjacent to the trench, and wherein the doping region has a doping type different from the read out node, wherein the doping region has a doping concentration so that the doping region remains depleted during operation.